U.S. Army Research Office (ARO): Ultra-wide Bandgap RF Electronics Center Fiscal Year 2022

SUSPENSE: Proposers’ Day: 15 December 2020 // Whitepapers Due – 15 February 2021 Description: The U.S. Army Research Office (ARO) is soliciting proposals for establishing a multidisciplinary research center for extreme radio-frequency electronics (x-RF electronics) based on ultra-wide bandgap (UWBG) semiconductors and related emerging materials.  The UWBG RF Electronics Center to be created will facilitate collaboration between extramural academic researchers and the Army in pursuit of a mutual goal: generating the foundational knowledge in solid-state physics, device structures, integrated circuit design, materials discovery and development, and physics-based machine learning needed to enable the next generation of RF electronics with unprecedented power, bandwidth, frequency agility, and size-weight-and power (SWaP) requirements. 

DoD Communities of Interest: C4I

Subject: Ultra-wide Bandgap RF Electronics Center Fiscal Year 2022

Due Date: White Papers Due: 15 February 2021

Government Organization: U.S. Army Research Office (ARO)

Description

The U.S. Army Research Office (ARO) is soliciting proposals for establishing a multidisciplinary research center for extreme radio-frequency electronics (x-RF electronics) based on ultra-wide bandgap (UWBG) semiconductors and related emerging materials. 

The UWBG RF Electronics Center to be created will facilitate collaboration between extramural academic researchers and the Army in pursuit of a mutual goal: generating the foundational knowledge in solid-state physics, device structures, integrated circuit design, materials discovery and development, and physics-based machine learning needed to enable the next generation of RF electronics with unprecedented power, bandwidth, frequency agility, and size-weight-and power (SWaP) requirements. 

This necessitates novel research that moves beyond the frequency, power, and noise constraints imposed by current approaches to modeling, materials, and established device structures. The Center will provide the Army with a new ability to create advanced RF technologies across its modernization priorities for robust multidomain operations in highly contested electromagnetic (EM) environments.

This BAA consists of three main topics: Ultra-wide Bandgap (UWBG) Semiconductor Physics and Devices, UWBG Materials, and Physics-Driven Machine Learning for UWBG Materials and RF Device Development. Some topics are further divided into sub-topics. Teams are encouraged to self-organize at any scale to create a proposal to address one, several, or all of these areas as they see fit. The full Center will be selected from a set of these Teams (as separate Team awards) that together appropriately cover the full scope of the BAA. Team awards can themselves include sub-awards to one or more institutions or organizations because the necessary expertise in addressing the numerous facets of the topics may reside within different organizations. All Team awards will collaborate and cooperate among themselves and with the Army S&T enterprise in accomplishing the research objectives.

Response Dates:

a. Proposers’ Day: 15 December 2020 1100-1500 Eastern Time. Virtual venue. Registration required and limited. Information available at the link below:

https://www.eventbrite.com/e/ultra‐wide‐bandgap‐rf‐electronics‐centerproposers‐day‐2020‐tickets‐127230577081

b. Whitepapers Due – 15 February 2021 no later than 4:00 PM Eastern Time.

c. Selection of whitepapers for full proposal on 22 March 2021

d. Proposals Due – 1 June 2021 no later than 4:00 PM Eastern Time

e. Selection of Proposal – 2 August 2021

See the BAA on the beta.SAM.gov link for more details.

Website: https://beta.sam.gov/opp/794a49a691794764980e15fc6698c521/view